Novel photocathodes using vacuum microelectronics technology
نویسندگان
چکیده
A new photocathode called a ‘‘photosensitive field emitter’’ has been proposed, and a prototype was fabricated. This new Ž . photocathode was realized using a gated Si field emitter tip and an hydrogenated amorphous Si a-Si:H p–i–n photodiode. The emission current from the photocathode is proportional to the illumination intensity, and detectable maximum of the illumination intensity was about 4000 mWrcm. The quantum efficiency was about 0.7. Its dynamic range was about 200 times wider than that of the field emitter type photocathode using non-gated field emitter. Moreover, the dark current was suppressed less than 0.1 nA. q 2000 Elsevier Science S.A. All rights reserved.
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